Title :
A novel technology for a-Si TFT-LCD´s with buried ITO electrode structure
Author :
Kawachi, Genshiro ; Kimura, Etsuko ; Wakui, Yoko ; Konishi, Nobutake ; Yamamoto, Hideaki ; Matsukawa, Yuka ; Sasano, Akira
Author_Institution :
Hitachi Res. Lab., Hitachi Ltd., Ibaraki, Japan
fDate :
7/1/1994 12:00:00 AM
Abstract :
A novel process technology for a-Si TFT-LCD´s with the buried ITO electrode (BI) structure was developed and applied to 10-in-diagonal LCD panels. By employing the BI structure, an aperture ratio of 29% was achieved in high resolution panels with a pixel size of 192 μ and the pixel defect density was reduced to about one third of the conventional structure. The defect reduction effect of the BI structure was also confirmed theoretically. The BI structure provides significant advantages for high-performance TFT-LCD´s
Keywords :
amorphous semiconductors; electrodes; elemental semiconductors; indium compounds; liquid crystal displays; silicon; thin film transistors; tin compounds; ITO; InSnO; LCD panels; Si; TFT-LCDs; aperture ratio; buried ITO electrode structure; defect reduction effect; pixel defect density; pixel size; process technology; Apertures; Bismuth; Brightness; Circuits; Costs; Electrodes; Indium tin oxide; Insulation; Production; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
