DocumentCode :
1103720
Title :
A high-frequency GaAs optical guided-wave electrooptic interferometric modulator
Author :
Donnelly, J.P. ; Demeo, N.L. ; Ferrante, G.A. ; Nichols, K.B.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA, USA
Volume :
21
Issue :
1
fYear :
1985
fDate :
1/1/1985 12:00:00 AM
Firstpage :
18
Lastpage :
21
Abstract :
The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.
Keywords :
Electrooptic modulation; Gallium materials/devices; Infrared interferometry; Optical strip waveguide components; Arm; Bandwidth; Electrooptic effects; Electrooptic modulators; Etching; Gallium arsenide; High speed optical techniques; Optical interferometry; Optical modulation; Optical waveguides;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072541
Filename :
1072541
Link To Document :
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