• DocumentCode
    1103724
  • Title

    InGaAsP/InP 1.3-µm wavelength surface-emitting LED´s for high-speed short-haul optical communication systems

  • Author

    Suzuki, Akira ; Uji, Toshio ; Inomoto, Yasumasa ; Hayashi, Junji ; Isoda, Yoichi ; Nomura, Hidenori

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    32
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    2609
  • Lastpage
    2614
  • Abstract
    Performance and reliability for InGaAsP/InP 1.3-µm wavelength high-speed surface-emitting DH light emitting diodes (LED´s) have been investigated. High-speed and high-radiance performances were obtained by the optimal design of both structural parameters and LED driving circuit. Rise and fall times were both 350 ps and peak optical power coupled to a 50-µm core 0.20 NA graded-index fiber at the 100-mA pulse current was - 15.8 dBm with 6-dB optical ON/OFF ratio. A 2-Gbit/s non-return-to-zero (NRZ) pulse transmission over a 500-m span was carried out, Feasibility of using surface-emitting LED´s in a high-speed optical communication system has been confirmed. Accelerated aging tests on high-speed LED´s were carried out. The half-power lifetimes have been estimated to be more than 1 × 108h at 50°C ambient temperature.
  • Keywords
    DH-HEMTs; High speed optical techniques; Indium phosphide; Light emitting diodes; Optical fiber communication; Optical pulses; Optical surface waves; Power system reliability; Structural engineering; Surface waves;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22391
  • Filename
    1485137