Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices-Part II: numerical solutions

Author

Scrobohaci, Paul G. ; Tang, Ting-wei

Author_Institution

Technol. Modeling Assoc., Palo Alto, CA, USA

Volume

41

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1206

Lastpage

1212

Abstract

A macroscopic transport model for the hot electron subpopulation (HES) and a nonlocal impact ionization (II) model were proposed in Part I of this article: see ibid. p. 1200, 1994. The transport equations have been derived from the Boltzmann transport equation (BTE) and closure has been provided by an empirically determined equation. The transport equations and the II model have been calibrated using data obtained from self-consistent Monte Carlo (SCMC) simulations. In this article we present the numerical solutions obtained by applying the proposed model to n⁺- n^--n⁺ structures with various doping profiles. The results are compared to the data obtained from SCMC simulations and also to those obtained from models proposed earlier by other authors

Keywords

Boltzmann equation; Monte Carlo methods; doping profiles; hot carriers; impact ionisation; numerical analysis; semiconductor device models; silicon; Boltzmann transport equation; calibrated; doping profiles; hot electron subpopulation; impact ionization; macroscopic transport model; n⁺- n^--n⁺ structures; nonlocal impact ionization model; numerical solutions; self-consistent Monte Carlo simulations; submicron silicon devices; transport equations; Boltzmann equation; Boundary conditions; Distributed computing; Doping profiles; Electrons; High definition video; Impact ionization; Monte Carlo methods; Semiconductor process modeling; Silicon devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293348

Filename

293348