DocumentCode
1103782
Title
A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency [Student Designs]
Author
Boers, Michael ; Parker, Anthony ; Weste, Neil
Author_Institution
Macquarie Univ., Sydney
Volume
9
Issue
2
fYear
2008
fDate
4/1/2008 12:00:00 AM
Firstpage
106
Lastpage
110
Abstract
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power-added efficiency (PAE) greater than 85%. It will be shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rules can produce first-pass power amplifier design success. An overview of design, fabrication, and testing processes is presented here together with measured results.
Keywords
HEMT circuits; III-V semiconductors; UHF power amplifiers; circuit CAD; circuit testing; gallium compounds; CAD simulation tools; GaN; HEMT amplifier; computer-aided design; gallium nitride high electron mobility transistor; power 6 W; power amplifier design; power-added efficiency; Computational modeling; Computer simulation; Design automation; Gallium nitride; HEMTs; High power amplifiers; III-V semiconductor materials; MODFETs; Power amplifiers; Power generation;
fLanguage
English
Journal_Title
Microwave Magazine, IEEE
Publisher
ieee
ISSN
1527-3342
Type
jour
DOI
10.1109/MMM.2008.915338
Filename
4472326
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