Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC

Author

Sheppard, Scott T. ; Melloch, Michael R. ; Cooper, James A., Jr.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

41

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1257

Lastpage

1264

Abstract

Inversion-channel and buried-channel gate-controlled diodes and MOSFET´s are investigated in the wide bandgap semiconductor 6H-SiC. These devices are fabricated using thermal oxidation and ion implantation. The gate-controlled diodes allow room temperature measurement of surface states, which is difficult with MOS capacitors due to the 3 eV bandgap of 6H-SiC. An effective electron mobility of 20 cm²/Vs is measured for the inversion-channel devices and a bulk electron mobility of 180 cm²/Vs is found in the channel of the buried-channel MOSFET. The buried-channel transistor is the first ion-implanted channel device in SIC and the first buried-channel MOSFET in the 6H-SiC polytype

Keywords

insulated gate field effect transistors; interface electron states; inversion layers; ion implantation; oxidation; semiconductor materials; silicon compounds; 6H-SiC polytype; SiC; bulk electron mobility; buried-channel MOS devices; effective electron mobility; gate-controlled diodes; inversion-channel MOS devices; ion implantation; surface states; thermal oxidation; wide bandgap semiconductor; Electron mobility; Ion implantation; MOS capacitors; MOS devices; MOSFET circuits; Oxidation; Photonic band gap; Semiconductor diodes; Temperature measurement; Wide band gap semiconductors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293356

Filename

293356