Title :
Hole mobility measurements in heavily doped Si1-xGex strained layers
Author :
Carns, T.K. ; Chun, Sang K. ; Tanner, Martin O. ; Wang, Kang L. ; Kamins, Ted I. ; Turner, John E. ; Lie, Donald Y C ; Nicolet, Marc A. ; Wilson, Robert G.
Author_Institution :
Device Res. Lab., California Univ., Los Angeles, CA, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
Both Hall and drift in-plane mobilities have been measured in compressively strained p-type Si1-xGex layers grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Measurements were taken over the boron doping range of 1018 cm-3 to 1020 cm-3 with Ge contents of 0⩽x⩽0.22. The apparent drift mobility is found to increase with increasing Ge content, whereas the Hall mobility decreases for the same samples at all doping levels studied. The Hall factor decreases with increasing Ge content, which may be due to additional scattering mechanisms introduced by Ge along with changes in the valence band structure as a result of strain. In this study we also provide the first report of Hall mobility measurements of deuterium-passivated, heavily doped Si
Keywords :
Ge-Si alloys; Hall effect; carrier mobility; heavily doped semiconductors; molecular beam epitaxial growth; vapour phase epitaxial growth; Hall factor; Hall mobilities; SiGe; chemical vapor deposition; drift in-plane mobilities; heavily doped Si1-xGex strained layers; hole mobility measurements; molecular beam epitaxy; passivation; scattering mechanisms; valence band structure; Cams; Capacitive sensors; Doping; Electron mobility; Hall effect; Laboratories; Light scattering; Molecular beam epitaxial growth; Semiconductor process modeling; Strain measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
