DocumentCode :
1103874
Title :
High-power (AlGa)As strip-buried heterostructure lasers
Author :
Van Der Ziel, Jan P. ; Logan, Ralph A. ; Dupuis, Russell D.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume :
21
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
1659
Lastpage :
1665
Abstract :
The characteristics of index-guided strip-buried heterostructure lasers are described. The lasers are grown by a two-step process, consisting of the initial 5-layer planar growth by MOCVD, and after etching to define the strip buried wave guide, recovery by Al0.65Ga0.35As using LPE. The devices are highly uniform, having 20 mA thresholds, quantum efficiencies of 0.65, and T0of 163°C. The TE polarized emission was in the lowest order transverse mode and consisted of ∼ 6 longitudinal modes. CW output powers of 50 mW per facet were obtained from lasers with reduced output reflectivity, and pulsed powers of 95 mW per facet from uncoated lasers have been obtained. The far-field angular widths were \\sim 23\\deg and \\sim 50\\deg in, and perpendicular to the junction plane, respectively. The total optical conversion efficiency of the coated laser emitting 50 mW CW was 41.5 percent.
Keywords :
CW lasers; Gallium materials/lasers; Pulsed lasers; Etching; Laser modes; MOCVD; Optical pulses; Polarization; Power generation; Power lasers; Reflectivity; Strips; Tellurium;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072556
Filename :
1072556
Link To Document :
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