Hot-electron degradation in NMOSFET´s: results from temperature anneal

Author

Ling, C.H. ; Ah, L.K. ; Choi, W.K. ; Tan, S.E. ; Ang, D.S.

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore

Volume

41

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1303

Lastpage

1305

Abstract

0.6 μm N-channel MOSFET´s are hot-electron stressed at V_g=V_d=8 V, t=10³ s to produce large changes in device saturation drain current I_d, linear channel conductance g_d, maximum transconductance g_m, subthreshold slope S, and threshold voltage shift V_t. Isochronal post-stress anneal up to 300°C depopulates the trapped electrons, resulting in substantial recovery of the hot-electron degradation to within 10% of the pre-stress value. Gate-to-drain capacitance reveals that interface traps, which are also generated in significant numbers, are only partially annealed. These results provide direct confirmation that trapped electrons rather than interface traps are mainly responsible for degradation in the following NMOSFET device parameters:I_d, g_d, g_m, S, V_t

Keywords

annealing; electron traps; hot carriers; insulated gate field effect transistors; interface electron states; 0.6 micron; 300 C; NMOSFET; device saturation drain current; gate-to-drain capacitance; hot-electron degradation; hot-electron stress; interface traps; isochronal post-stress anneal; linear channel conductance; maximum transconductance; n-channel MOSFET; subthreshold slope; temperature anneal; threshold voltage shift; trapped electrons; Annealing; Clamps; Degradation; Electron traps; Implants; Insulated gate bipolar transistors; MOSFET circuits; Temperature; Virtual colonoscopy; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293364

Filename

293364