Noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistors

Noise modeling in TEGFET´s which provides good results in agreement with the experimental findings is presented. The influence of the main technological parameters on the noise figure and associated gain is given for operating frequencies up to 60 GHz. A comparison between TEGFET´s and MESFET´s is carried out. A new method for calculating the noise and gain performances of FET´s is then proposed.