• DocumentCode
    1104007
  • Title

    Increasing the current driving capability of epitaxial Schottky-barrier diodes using high-energy implantation

  • Author

    Chuang, C.T. ; Li, G.P. ; Tan, Denny Duan-Lee ; Ning, Tak H. ; Arienzo, Maurizio

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    32
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    2819
  • Lastpage
    2823
  • Abstract
    A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of PtSi high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7- µm 2.0 × 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 × 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics.
  • Keywords
    Bipolar integrated circuits; Current density; Degradation; Epitaxial layers; Implants; Logic circuits; Resistors; Schottky diodes; Stability; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22421
  • Filename
    1485167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104007