• DocumentCode
    1104019
  • Title

    FET Characterization using gated-TLM structure

  • Author

    Baier, Steven M. ; Shur, Michael S. ; Lee, K. ; Cirillo, Nicholas C., Jr. ; Hanka, S.A.

  • Author_Institution
    Honeywell Physical Sciences Center, Bloomington, MN
  • Volume
    32
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    2824
  • Lastpage
    2829
  • Abstract
    A new FET characterization structure consisting of parallel ohmic contacts with gates of varying lengths in between is described. The FET source resistance is accurately measured without parameter fitting or iteration. The low-field electron mobility beneath the gate is determined as an effective uniform value and as a function of distance into the channel without iteration. The use of this structure is demonstrated on self-aligned ion-implanted GaAs MESFET´s.
  • Keywords
    Contact resistance; Electrical resistance measurement; FETs; Fabrication; Gallium arsenide; HEMTs; MESFETs; MODFETs; Ohmic contacts; Transmission lines;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22422
  • Filename
    1485168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104019