Title :
FET Characterization using gated-TLM structure
Author :
Baier, Steven M. ; Shur, Michael S. ; Lee, K. ; Cirillo, Nicholas C., Jr. ; Hanka, S.A.
Author_Institution :
Honeywell Physical Sciences Center, Bloomington, MN
fDate :
12/1/1985 12:00:00 AM
Abstract :
A new FET characterization structure consisting of parallel ohmic contacts with gates of varying lengths in between is described. The FET source resistance is accurately measured without parameter fitting or iteration. The low-field electron mobility beneath the gate is determined as an effective uniform value and as a function of distance into the channel without iteration. The use of this structure is demonstrated on self-aligned ion-implanted GaAs MESFET´s.
Keywords :
Contact resistance; Electrical resistance measurement; FETs; Fabrication; Gallium arsenide; HEMTs; MESFETs; MODFETs; Ohmic contacts; Transmission lines;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22422
