DocumentCode :
1104035
Title :
The effects of substrate gettering on GaAs MESFET performance
Author :
Wang, Faa-Ching ; Bujatti, Marina
Author_Institution :
Ethyl Corporation, Garland, TX
Volume :
32
Issue :
12
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
2839
Lastpage :
2843
Abstract :
An increase of about 40 percent in dc transconductance and RF gain of directly ion-implanted GaAs MESFET´s was observed when the substrates were subjected to an extrinsic gettering treatment before ion implantation. The gettering treatment consisted of mechanical damage on the backside of the wafer followed by a mild heat treatment. The relationship between material parameters and MESFET performance is discussed and a mechanism for the gettering action is proposed.
Keywords :
Gallium arsenide; Gettering; Heat treatment; Impurities; Ion implantation; MESFETs; Microwave technology; Radio frequency; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22424
Filename :
1485170
Link To Document :
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