Title :
A novel GaAs Schottky-drain power FET for microwave application
Author :
Calviello, Joseph A. ; Bie, Paul R. ; Pomian, Ronald J. ; Cappello, Anthony
Author_Institution :
Eaton Coporation, Melville, NY
fDate :
12/1/1985 12:00:00 AM
Abstract :
A GaAs Schottky-drain [1] power FET (SDFET) having a 2.4-mm gate periphery and 1.5-µm gate length has been developed, and it realized excellent performance at 10 GHz. This includes an output power in excess of 1 W and 36-percent power-added efficiency (PAE). These devices were fabricated on epitaxial layers grown on 2-µm-thick buffer layers using vapor-phase epitaxy. With the exception of the mesa and recess channels, which were defined by conventional chemical etch, the devices were processed by the plasma dry-etch technique. For the Schottky junctions and source ohmic contacts, we used tantalum with a thick gold overlayer and GeAu, respectively.
Keywords :
Buffer layers; Chemical processes; Dry etching; Epitaxial growth; Epitaxial layers; Gallium arsenide; Microwave FETs; Microwave devices; Plasma applications; Power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22425