DocumentCode :
1104093
Title :
Laser oscillation at 3-4 µm optically pumped InAs1-x-y Sbx Py
Author :
Van Der Ziel, Jan P. ; Logan, Ralph A. ; Mikulyak, Robert M. ; Ballman, A.A.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Volume :
21
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
1827
Lastpage :
1832
Abstract :
Quaternary InAs1-x-y Sbx Py ) and ternary InAs1-x Sbx have been grown on InAs substrates using liquid phase epitaxy. The quaternary layers are lattice matched to InAs for 
, and have bandgaps greater than InAs. The ternary layers have lower bandgaps than InAs, but have larger lattice constants. Reasonable quality growth has been obtained up to 
where the luminescence peak is shifted to ∼4 from 3.1 μm and the lattice mismatch is ∼0.01. Optically pumped laser emission at 3.1 μm has been observed from 77 to 100 °K using an InAs active layer with InAs1-x-y Sbx Py clading layers. Laser emission at 3.9 μm has been observed from 77 to 125 °K using a InAs1-x Sbx active layer, with 
, and InAs cladding layers. Laser emission from intermediate ternary compositions has also been observed.
, and have bandgaps greater than InAs. The ternary layers have lower bandgaps than InAs, but have larger lattice constants. Reasonable quality growth has been obtained up to where the luminescence peak is shifted to ∼4 from 3.1 μm and the lattice mismatch is ∼0.01. Optically pumped laser emission at 3.1 μm has been observed from 77 to 100 °K using an InAs active layer with InAs , and InAs cladding layers. Laser emission from intermediate ternary compositions has also been observed.Keywords :
Epitaxial growth; Infrared lasers; Semiconductor lasers; Laser excitation; Lattices; Optical materials; Optical pumping; Optical refraction; Optical variables control; Photonic band gap; Pump lasers; Stimulated emission; Substrates;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072573
Filename :
1072573
Link To Document :
