• DocumentCode
    1104103
  • Title

    Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET´s

  • Author

    Tsuchiya, T. ; Frey, J.

  • Author_Institution
    Cornell University, Ithaca, NY
  • Volume
    6
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    8
  • Lastpage
    11
  • Abstract
    The relationship between hot electrons and holes and the degradation of p- and n-channel MOSFET´s is clarified by experimentally determining where along the channel the SiO2is most affected by each type of carrier. Transconductance degradation is found to be caused by hot-hole injection in pMOSFET´s, and by hot-electron injection in nMOSFET´s.
  • Keywords
    Boron; Charge carrier processes; Current measurement; Degradation; Hot carriers; MOSFET circuits; Marine vehicles; Stress measurement; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26024
  • Filename
    1485177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104103