Title :
Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET´s
Author :
Tsuchiya, T. ; Frey, J.
Author_Institution :
Cornell University, Ithaca, NY
fDate :
1/1/1985 12:00:00 AM
Abstract :
The relationship between hot electrons and holes and the degradation of p- and n-channel MOSFET´s is clarified by experimentally determining where along the channel the SiO2is most affected by each type of carrier. Transconductance degradation is found to be caused by hot-hole injection in pMOSFET´s, and by hot-electron injection in nMOSFET´s.
Keywords :
Boron; Charge carrier processes; Current measurement; Degradation; Hot carriers; MOSFET circuits; Marine vehicles; Stress measurement; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26024
