• DocumentCode
    1104201
  • Title

    Isotope effects in MNOS transistors

  • Author

    Pryor, R.W.

  • Author_Institution
    Energy Conversion Devices, Inc., Troy, MI
  • Volume
    6
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    This letter presents arguments for the experimental verification of deuterium as the primary agent in forming "effective" traps in hydrogenated silicon nitride layers in metal-nitride oxide semiconductor (MNOS) transistors. Results presented show significant improvement in charge storage as a result of the substitution of deuterium for hydrogen.
  • Keywords
    Amorphous silicon; Annealing; Deuterium; Dielectric constant; Electron traps; Hydrogen storage; Ionization; Isotopes; Photonic band gap; Semiconductor films;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26032
  • Filename
    1485185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104201