Title :
Isotope effects in MNOS transistors
Author_Institution :
Energy Conversion Devices, Inc., Troy, MI
fDate :
1/1/1985 12:00:00 AM
Abstract :
This letter presents arguments for the experimental verification of deuterium as the primary agent in forming "effective" traps in hydrogenated silicon nitride layers in metal-nitride oxide semiconductor (MNOS) transistors. Results presented show significant improvement in charge storage as a result of the substitution of deuterium for hydrogen.
Keywords :
Amorphous silicon; Annealing; Deuterium; Dielectric constant; Electron traps; Hydrogen storage; Ionization; Isotopes; Photonic band gap; Semiconductor films;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26032
