Terahertz imaging with GaAS field-effect transistors
Author :
Lisauskas, A. ; von Spiegel, W. ; Boubanga-Tombet, S. ; El Fatimy, A. ; Coquillat, D. ; Teppe, F. ; Dyakonova, N. ; Knap, W. ; Roskos, H.G.
Author_Institution :
Johann Wolfgang Goethe-Univ., Frankfurt
Volume :
44
Issue :
6
fYear :
2008
Firstpage :
408
Lastpage :
409
Abstract :
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.
Keywords :
gallium arsenide; high electron mobility transistors; submillimetre wave imaging; GaAs; field-effect transistor; high-electron-mobility transistor; terahertz imaging;
