DocumentCode
1104220
Title
Terahertz imaging with GaAS field-effect transistors
Author
Lisauskas, A. ; von Spiegel, W. ; Boubanga-Tombet, S. ; El Fatimy, A. ; Coquillat, D. ; Teppe, F. ; Dyakonova, N. ; Knap, W. ; Roskos, H.G.
Author_Institution
Johann Wolfgang Goethe-Univ., Frankfurt
Volume
44
Issue
6
fYear
2008
Firstpage
408
Lastpage
409
Abstract
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.
Keywords
gallium arsenide; high electron mobility transistors; submillimetre wave imaging; GaAs; field-effect transistor; high-electron-mobility transistor; terahertz imaging;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20080172
Filename
4472409
Link To Document