DocumentCode :
1104239
Title :
Variation of MIM damascene capacitor HF performance evolving from 2D to 3D architectures
Author :
Capraro, S. ; Bermond, C. ; Vo, T.T. ; Farcy, A. ; Piquet, J. ; Thomas, M. ; Cremer, S. ; Flechet, B. ; Torres, J.
Author_Institution :
Univ. de Savoie, Le Bourget du Lac
Volume :
44
Issue :
6
fYear :
2008
Firstpage :
411
Lastpage :
412
Abstract :
High-frequency (HF) characterisations of 2D and 3D metal-insulator-metal (MIM) damascene capacitors are presented focusing on the impact of the MIM architecture on the HF performance of capacitors integrated in the back end of line with Si3N4 as the insulating material. Dedicated test structures were integrated and HF characterisation methods developed. Results show that properties (parasitic inductance and cutoff frequency) of MIM capacitors improve with the 3D architecture.
Keywords :
MIM devices; capacitors; 2D metal-insulator-metal damascene capacitor; 3D metal-insulator-metal damascene capacitor; MIM capacitor; high-frequency characterisation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20083129
Filename :
4472411
Link To Document :
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