• DocumentCode
    1104257
  • Title

    Comparison of GaAs MESFET noise figures

  • Author

    Goronkin, H. ; Nair, V.

  • Volume
    6
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    47
  • Lastpage
    49
  • Abstract
    A method of comparing noise figures of GaAs MESFET´s is presented. The noise measure M graphed against gate length for devices having the lowest value of M gives a figure of merit graph against which other devices may be compared. This is useful in determining the relative value of material and process, improvements for a given gate length.
  • Keywords
    FETs; Frequency; Gallium arsenide; Laboratories; Length measurement; MESFETs; Noise figure; Noise measurement; Parasitic capacitance; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26037
  • Filename
    1485190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104257