Title :
Comparison of GaAs MESFET noise figures
Author :
Goronkin, H. ; Nair, V.
fDate :
1/1/1985 12:00:00 AM
Abstract :
A method of comparing noise figures of GaAs MESFET´s is presented. The noise measure M graphed against gate length for devices having the lowest value of M gives a figure of merit graph against which other devices may be compared. This is useful in determining the relative value of material and process, improvements for a given gate length.
Keywords :
FETs; Frequency; Gallium arsenide; Laboratories; Length measurement; MESFETs; Noise figure; Noise measurement; Parasitic capacitance; Semiconductor device noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26037
