Title :
High-power InGaAs/GaAs 1.3 μm VCSELS based on novel electrical confinement scheme
Author :
Von Würtemberg, R. Marcks ; Berggren, J. ; Dainese, M. ; Hammar, M.
Author_Institution :
R. Inst. of Technol. (KTH), Kista
Abstract :
Reported are 1.3 mum InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mum large devices.
Keywords :
epitaxial growth; lithography; surface emitting lasers; InGaAs-GaAs; cavity region; differential efficiency; electrical confinement scheme; high power VCSEL; lithographic; selective area epitaxial regrowth; size 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080056
