DocumentCode :
1104307
Title :
Below bandgap emission and absorption in ZnSnP2 /GaAs heterojunctions
Author :
Patten, E.A. ; Davis, G.A. ; Hsieh, S.J. ; Wolfe, C.M.
Author_Institution :
Washington University, St. Louis, MO
Volume :
6
Issue :
1
fYear :
1985
fDate :
1/1/1985 12:00:00 AM
Firstpage :
60
Lastpage :
62
Abstract :
Below bandgap emission and absorption are observed in p-ZnSnP2 on n-GaAs heterojunctions. The band lineup of this heterostructure system suggests that the below bandgap transition is between the valence bands of GaAs and the conduction band of ZnSnP2 at the interface. The predicted value for the interfacial gap of 
eV compares with an experimental value of 1.31 eV.
eV compares with an experimental value of 1.31 eV.Keywords :
Absorption; Electrons; Gallium arsenide; Heterojunctions; Photoconductivity; Photonic band gap; Photovoltaic systems; Radiative recombination; Solar power generation; Substrates;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26041
Filename :
1485194
Link To Document :
