• DocumentCode
    1104314
  • Title

    Comments on "Small geometry MOS transistor capacitance measurement method using simple on-chip circuits"

  • Author

    Yao, C.T. ; Lin, H.C.

  • Author_Institution
    Martin Marietta Laboratories, Baltimore, MD
  • Volume
    6
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    63
  • Lastpage
    63
  • Abstract
    A careful study of the recent letter published in this journal by Oristian et al. [1] shows that their measurement arrangement cannot be used to measure the internodal capacitances of a MOSFET. Their measurement arrangement works only under their specified conditions which can be checked by the quasi-static CV method. However, their measurement arrangement cannot be extended to other conditions due to their fundamentally wrong assumption.
  • Keywords
    Capacitance measurement; Capacitors; Circuit testing; Geometry; Instruments; MOSFET circuits; Parasitic capacitance; Semiconductor device measurement; Voltage; Wiring;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26042
  • Filename
    1485195