DocumentCode
1104314
Title
Comments on "Small geometry MOS transistor capacitance measurement method using simple on-chip circuits"
Author
Yao, C.T. ; Lin, H.C.
Author_Institution
Martin Marietta Laboratories, Baltimore, MD
Volume
6
Issue
1
fYear
1985
fDate
1/1/1985 12:00:00 AM
Firstpage
63
Lastpage
63
Abstract
A careful study of the recent letter published in this journal by Oristian et al. [1] shows that their measurement arrangement cannot be used to measure the internodal capacitances of a MOSFET. Their measurement arrangement works only under their specified conditions which can be checked by the quasi-static CV method. However, their measurement arrangement cannot be extended to other conditions due to their fundamentally wrong assumption.
Keywords
Capacitance measurement; Capacitors; Circuit testing; Geometry; Instruments; MOSFET circuits; Parasitic capacitance; Semiconductor device measurement; Voltage; Wiring;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26042
Filename
1485195
Link To Document