DocumentCode
1104326
Title
A reply to "Comments on \´small geometry MOS Transistor capacitance measurement method using simple on-chip circuits\´"
Author
Orisian, J.E. ; Iwai, H. ; Walker, J.T. ; Dutton, R.W.
Author_Institution
Stanford University, Stanford, CA
Volume
6
Issue
1
fYear
1985
fDate
1/1/1985 12:00:00 AM
Firstpage
64
Lastpage
67
Abstract
Internodal MOS transistor capacitances are described from a measurement perspective. The on-chip MOS transistor capacitance measurement method, previously reported, is discussed as an application of internodal capacitance theory.
Keywords
Capacitance measurement; Circuits; Current measurement; Electrodes; Frequency; Geometry; Laboratories; MOSFETs; Particle measurements; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26043
Filename
1485196
Link To Document