Title :
A reply to "Comments on \´small geometry MOS Transistor capacitance measurement method using simple on-chip circuits\´"
Author :
Orisian, J.E. ; Iwai, H. ; Walker, J.T. ; Dutton, R.W.
Author_Institution :
Stanford University, Stanford, CA
fDate :
1/1/1985 12:00:00 AM
Abstract :
Internodal MOS transistor capacitances are described from a measurement perspective. The on-chip MOS transistor capacitance measurement method, previously reported, is discussed as an application of internodal capacitance theory.
Keywords :
Capacitance measurement; Circuits; Current measurement; Electrodes; Frequency; Geometry; Laboratories; MOSFETs; Particle measurements; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26043
