• DocumentCode
    1104326
  • Title

    A reply to "Comments on \´small geometry MOS Transistor capacitance measurement method using simple on-chip circuits\´"

  • Author

    Orisian, J.E. ; Iwai, H. ; Walker, J.T. ; Dutton, R.W.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    6
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    67
  • Abstract
    Internodal MOS transistor capacitances are described from a measurement perspective. The on-chip MOS transistor capacitance measurement method, previously reported, is discussed as an application of internodal capacitance theory.
  • Keywords
    Capacitance measurement; Circuits; Current measurement; Electrodes; Frequency; Geometry; Laboratories; MOSFETs; Particle measurements; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26043
  • Filename
    1485196