DocumentCode
1104363
Title
Analysis of insulated gate transistor turn-off characteristics
Author
Baliga, B.J.
Author_Institution
General electric Company, Schenectady, NY
Volume
6
Issue
2
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
74
Lastpage
77
Abstract
A model based upon a MOSFET driving a wide-base p-n-p transistor is presented for analysis of the turn-off behavior of n-channel insulated gate transistors. This model is found to provide a very good quantitative explanation of the shape of the collector current waveform during turn-off. Verification was accomplished using insulated gate transistors (IGT´s) fabricated with two voltage ratings and a variety of radiation doses. This analysis allows the separation of the channel (electron) and minority carrier (hole) current flow in the IGT for the first time.
Keywords
Charge carrier processes; Current density; Electrons; Equivalent circuits; Helium; Insulation; MOSFET circuits; Shape; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26048
Filename
1485201
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