DocumentCode :
1104417
Title :
Optical multiplication in solid-state imaging devices with an inherent MNOS Memory gate
Author :
Yamasaki, H. ; Ando, T.
Author_Institution :
Shizuoka University, Hamamatsu, Japan
Volume :
6
Issue :
2
fYear :
1985
fDate :
2/1/1985 12:00:00 AM
Firstpage :
88
Lastpage :
90
Abstract :
A simple model is developed which is capable of predicting the product LΔ VFB, where L is the incoming irradiance, and Δ VFBis the flat-band voltage shift of the memory gate, which is proportional to the exposing light signal in the previous write cycle. Preliminary experimental results are presented which confirm the model. The optical multiplication feature leads to a real-time two-dimensional image processor through which spatial convolution or correlation can be obtained.
Keywords :
Convolution; FETs; Nonlinear optics; Optical devices; Optical filters; Optical imaging; Optical sensors; Sampling methods; Solid state circuits; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26053
Filename :
1485206
Link To Document :
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