Title :
A 4.2-ps logic gate using new Pb-alloy Josephson IC technology
Author :
Nagata, K. ; Nakano, J. ; Mimura, Y. ; Kodaka, I. ; Kubo, S. ; Yanagawa, F.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
fDate :
2/1/1985 12:00:00 AM
Abstract :
A high-speed logic gate is attained using new Pb-alloy Josephson IC technology. Three design and fabrication techniques are developed for small Ijscattering. They are a gate pattern design rule using junctions with identical geometrical construction, a double-layer resist stencil technique, and RF oxidation in CO2plasma. A high-gain direct-coupled Josephson logic (HDCL) gate cascade chain is experimentally fabricated using a new 2-µm process developed from this technology. At a high current density of 10 kA/cm2, high quality junctions are obtained with a small Ijscattering of &sigma = 6.8 percent. A very fast switching speed of 4.2 ps/gate is achieved.
Keywords :
Current density; Fabrication; High speed integrated circuits; Josephson junctions; Logic gates; Oxidation; Plasma density; Radio frequency; Resists; Scattering;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26055