• DocumentCode
    1104449
  • Title

    Auger effect in GaSb quantum well lasers

  • Author

    Sugimura, Akira ; Patzak, Erwin ; Meissner, Peter

  • Author_Institution
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
  • Volume
    21
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    1851
  • Lastpage
    1853
  • Abstract
    The Auger recombination effect in GaSb quantum well lasers is discussed. A formula for the calculation of the CHSH Auger rate in quantum well structures is presented, which can be applied to the material where the bandgap is almost the same as the split-off gap. Using this formula, the quantum efficiency of the GaSb quantum well laser is calculated and compared to those of conventional double heterostructure lasers. It is found that the quantum efficiency of the GaSb quantum well laser can be improved to values higher than 50 percent in the wavelength range of 1.5-1.8\\mu m.
  • Keywords
    Gallium materials/lasers; DH-HEMTs; Gallium arsenide; Gas lasers; Helium; Laser theory; Optical materials; Particle scattering; Quantum well lasers; Radiative recombination; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072604
  • Filename
    1072604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104449