DocumentCode
1104494
Title
The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/ InGaAs avalanche photodiodes
Author
Jhee, Y.K. ; Campbell, J.C. ; Holden, W.S. ; Dentai, A.G. ; Plourde, J.K.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
21
Issue
12
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
1858
Lastpage
1861
Abstract
We have investigated the effect of spatial gain uniformity on the multiplication noise of InP/InGaAsP/InGaAs avalanche photodiodes (APD\´s) with separate absorption, "grading," and multiplication regions. APD\´s with localized regions of high gain exhibit higher excess noise factors and poorer Performance in lightwave receivers than those with uniform gain.
Keywords
Avalanche photodiodes; Laser noise; Avalanche photodiodes; Bit rate; Dark current; Indium gallium arsenide; Indium phosphide; Neodymium; Noise measurement; PIN photodiodes; Performance gain; Preamplifiers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072608
Filename
1072608
Link To Document