DocumentCode
1104508
Title
Analysis and scaling of Kelvin resistors for extraction of specific contact resistivity
Author
Loh, W.M. ; Saraswat, K. ; Dutton, R.W.
Author_Institution
Stanford University, Stanford, CA
Volume
6
Issue
3
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
105
Lastpage
108
Abstract
An accurate numerical analysis of Kelvin resistors used for direct interfacial contact resistance measurements is presented. Curves that allow extraction of true specific contact resistivity from measured specific contact resistivity are given for different ratios of square contact window size (l) to square diffusion tap width (w). Scaling transformations are proposed to extract curves for different feature sizes. It has been shown that when l is made smaller than w, the extracted value of the specific contact resistivity (ρce ) can be significantly higher than the true specific contact resistivity (ρc ), especially for low values of ρc .
Keywords
Arm; Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Kelvin; Laplace equations; Numerical analysis; Resistors; Surface resistance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26061
Filename
1485214
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