DocumentCode :
1104565
Title :
MBE grown n+-i-δ(p+)-i-n+GaAs V-groove barrier transistor
Author :
Chang, C.Y. ; Wang, Y.H. ; Liu, W.C. ; Liao, S.A.
Author_Institution :
National Cheng Kung University, Tainan, Taiwan, China
Volume :
6
Issue :
3
fYear :
1985
fDate :
3/1/1985 12:00:00 AM
Firstpage :
123
Lastpage :
125
Abstract :
The three-terminal n+-i-δ(p+)-i-n+V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the δ(p+), the thin p+layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of ultra-high-frequency ( 
-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.
-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.Keywords :
Aluminum; Delay effects; Epitaxial growth; Etching; Molecular beam epitaxial growth; Ohmic contacts; Photodetectors; Schottky diodes; Substrates; Thyristors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26067
Filename :
1485220
Link To Document :
