Author_Institution :
Dept. of Chem., Tsinghua Univ., Beijing, China
Abstract :
Integrating the photosensitive and memory properties into one single device, organic phototransistor memory (OPTM) is promising for applications in optoelectrical fields. By optimizing the channel length/width ratio and the resistance of the electrode lead, OPTM performance could be improved effectively. Interestingly, the OPTM showed no obvious memory effect with an electrical programming process, while applied along with light illumination, the photoresponsivity, photocurrent/dark current ratio, and shift of threshold voltage could achieve the highest values, which were 3.59 A W-1, 1.4 × 104, and 14.4 V, respectively. Notably, the retention time over 1.8 × 105 s was 27 times longer than our previous reports and could ensure the application in nonvolatile memories. Furthermore, the OPTM could be applied in programmable and erasable circuit. It is also potential in flexible device.
Keywords :
integrated optoelectronics; optical storage; organic compounds; photoemission; phototransistors; programmable circuits; tantalum compounds; OPTM; Ta2O5; channel length-width ratio; dark current; electrical programming process; electrode lead resistance; erasable phototransistor memory; flexible device; improved retention time; light illumination; nonvolatile memories; optoelectrical fields; organic phototransistor memory; photocurrent; photoresponsivity; photosensitive properties; programmable pentacene-Ta2O5 phototransistor memory; threshold voltage shift; voltage 14.4 V; Electrodes; Fabrication; Lighting; Logic gates; Pentacene; Phototransistors; ITO photolithography; ITO photolithography.; Organic phototransistor memory (OPTM); photoresponsivity; retention time;
