Title :
On the inappropriate use of the intrinsic level as a measure of the electrostatic potential in semiconductor devices
Author_Institution :
Louisiana State University, Baton Rouge, LA
fDate :
3/1/1985 12:00:00 AM
Abstract :
The relationship between the intrinsic Fermi level Eiand the electrostatic potential φ is reviewed in detail. It is shown that, contrary to popular belief, Eihas no physical significance and cannot be used in general as a reference for φ. The local vacuum level gives the spatial variation of φ and is defined in the context of the energy-band diagram. These results pertain directly to the analysis of devices with nonuniform band structure, such as heterojunctions.
Keywords :
Charge carrier density; Crystalline materials; Electrons; Electrostatic measurements; Elementary particle vacuum; Heterojunctions; Potential energy; Semiconductor device measurement; Semiconductor devices; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26069