DocumentCode
1104587
Title
On the inappropriate use of the intrinsic level as a measure of the electrostatic potential in semiconductor devices
Author
Marshak, A.H.
Author_Institution
Louisiana State University, Baton Rouge, LA
Volume
6
Issue
3
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
128
Lastpage
129
Abstract
The relationship between the intrinsic Fermi level Ei and the electrostatic potential φ is reviewed in detail. It is shown that, contrary to popular belief, Ei has no physical significance and cannot be used in general as a reference for φ. The local vacuum level gives the spatial variation of φ and is defined in the context of the energy-band diagram. These results pertain directly to the analysis of devices with nonuniform band structure, such as heterojunctions.
Keywords
Charge carrier density; Crystalline materials; Electrons; Electrostatic measurements; Elementary particle vacuum; Heterojunctions; Potential energy; Semiconductor device measurement; Semiconductor devices; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26069
Filename
1485222
Link To Document