• DocumentCode
    1104587
  • Title

    On the inappropriate use of the intrinsic level as a measure of the electrostatic potential in semiconductor devices

  • Author

    Marshak, A.H.

  • Author_Institution
    Louisiana State University, Baton Rouge, LA
  • Volume
    6
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    128
  • Lastpage
    129
  • Abstract
    The relationship between the intrinsic Fermi level Eiand the electrostatic potential φ is reviewed in detail. It is shown that, contrary to popular belief, Eihas no physical significance and cannot be used in general as a reference for φ. The local vacuum level gives the spatial variation of φ and is defined in the context of the energy-band diagram. These results pertain directly to the analysis of devices with nonuniform band structure, such as heterojunctions.
  • Keywords
    Charge carrier density; Crystalline materials; Electrons; Electrostatic measurements; Elementary particle vacuum; Heterojunctions; Potential energy; Semiconductor device measurement; Semiconductor devices; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26069
  • Filename
    1485222