• DocumentCode
    1104649
  • Title

    Gate-width dependence of GaAs FET transient response

  • Author

    Wong, T.

  • Author_Institution
    Illinois Institute of Technology, Chicago, IL
  • Volume
    6
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    146
  • Lastpage
    148
  • Abstract
    An analysis of the transient response of the GaAs FET by means of a distributed model is presented. Using a numerical-technique based on the direct evaluation of the Bromwich integral for inverse-Laplace transform, the propagation delay and rise time of devices with different gate widths are obtained. Results indicate that propagation effect is significant when the gate width exceeds 150 µm for a typical MESFET. The presented method can serve as the basis of time-domain device parameter optimization in CAD routines.
  • Keywords
    Delay effects; FETs; Gallium arsenide; Integral equations; MESFETs; Propagation delay; Reflection; Steady-state; Transient response; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26075
  • Filename
    1485228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104649