AlGaAs/GaAs 2-DEG FET´s fabricated from MO-CVD Wafers

A transconductance (gm) of as high as 330 mS/mm is obtained from wafers grown by MO-CVD in which triethyl gallium and triethyl aluminum are used as organometallic compounds. A comparison between the experimental and theoretical results is made for the dependence of gmon the thickness of the AlGaAs layer. The saturation of velocity of 2-DEG determined from the drain I-V characteristics is found to be as high as 2 × 10⁷cm/s regardless of the absence of the undoped spacer layer.