Title :
Ferroelectrics for nonvolatile RAMs
Author :
Bondurant, David ; Gnadinger, Fred
fDate :
7/1/1989 12:00:00 AM
Abstract :
The structure and operation of ferroelectric thin-film memory capacitors for use in nonvolatile random-access memory applications are described. The search for the ideal ferroelectric material for ferro-electronic memory applications is examined. Possible military and nonmilitary applications of these memories are noted.<>
Keywords :
ferroelectric materials; ferroelectric thin films; random-access storage; applications; ferroelectric material; ferroelectric thin-film memory capacitors; nonvolatile RAMs; random-access storage; Capacitors; Ferroelectric materials; Nonvolatile memory; Random access memory; Read only memory; Read-write memory; Semiconductor thin films; Springs; Thin film devices; Threshold voltage;
Journal_Title :
Spectrum, IEEE
