DocumentCode
1104715
Title
Comparison of 300-, 600-, and 1200-V n-channel insulated gate transistors
Author
Chow, T.P. ; Baliga, B.J.
Author_Institution
General Electric Company, Schenectady, NY
Volume
6
Issue
4
fYear
1985
fDate
4/1/1985 12:00:00 AM
Firstpage
161
Lastpage
163
Abstract
The performance of insulated gate transistors with 300-, 600-, and 1200-V ratings were experimentally investigated. A comparison of several device characteristics, such as forward conduction, forward drop versus turn-off time tradeoff, and the dependence of turn-off time and leakage current upon electron irradiation dosage, is provided.
Keywords
Bipolar transistors; Conductivity; Current density; Doping; Electrons; Insulation; Leakage current; MOSFET circuits; Power MOSFET; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26082
Filename
1485235
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