Experimental and theoretical noise analysis of microwave HEMTs

Author

Joshin, Kazukiyo ; Asai, Satoru ; Hirachi, Yasutake ; Abe, Masayuki

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

Volume

36

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

2274

Lastpage

2280

Abstract

Low-frequency noise power and high-frequency noise figures in HEMTs (high electron mobility transistors) were measured and compared with calculations based on a one-dimensional noise model to characterize their low-noise properties. It was found that the drain noise current parameter Q in HEMTS is lower than that in GaAs MESFETs. The strong correlation between drain- and induced-gate-noise currents in HEMTs is due to the asymmetric distribution of noise generation along a channel, and the drain noise current is nearly canceled by those induced-gate-noise current. The intrinsic thermal noise from source and gate resistances is about 25% of the total output noise in the 0.25-μm gate-length HEMT considered

Keywords

electron device noise; high electron mobility transistors; random noise; semiconductor device models; solid-state microwave devices; thermal noise; 0.25 micron; HF noise figures; LF noise power; drain noise current parameter; gate length; gate resistances; high electron mobility transistors; induced-gate-noise currents; intrinsic thermal noise; microwave HEMT; one-dimensional noise model; source resistance; Gallium arsenide; HEMTs; Low-frequency noise; MESFETs; MODFETs; Noise cancellation; Noise figure; Noise generators; Noise measurement; Power measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40910

Filename

40910