• DocumentCode
    1104753
  • Title

    Comparison of the orientation effect of SiO2- and Si3N4-encapsulated GaAs MESFET´s

  • Author

    Ohnishi, T. ; Onodera, T. ; Yokoyama, N. ; Nishi, H.

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    6
  • Issue
    4
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    172
  • Lastpage
    174
  • Abstract
    This letter compares the influence of stressed-SiO2and Si3N4films on threshold voltage of WSix-gate self-aligned GaAs MESFET´s oriented along [011]- and [011]-directions. The experimental results showed that the orientation effect originates, mainly from piezoelectric effect due to strain in the n-layers, induced by the dielectric overlayer. Furthermore, the disagreement among workers regarding the preferable orientation turned out to be due to the difference of the stress-sign in dielectric overlayers employed; it was confirmed that SiO2film is in compressive stress and Si3n4film in tensile stress on GaAs.
  • Keywords
    Capacitive sensors; Compressive stress; Dielectrics; Gallium arsenide; MESFETs; Piezoelectric effect; Piezoelectric films; Semiconductor films; Tensile stress; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26086
  • Filename
    1485239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104753