• DocumentCode
    1104805
  • Title

    Geometry effects in MOSFET channel length extraction algorithms

  • Author

    Wordeman, M.R. ; Sun, J.Y.-C. ; Laux, S.E.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
  • Volume
    6
  • Issue
    4
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    186
  • Lastpage
    188
  • Abstract
    Several techniques have been proposed to determine the channel length and series resistance of MOSFET´s. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques which take these effects into account are proposed for extracting the channel length and series resistance.
  • Keywords
    Distortion measurement; Doping; Electric resistance; Electrical resistance measurement; FETs; Geometry; Length measurement; MOSFET circuits; Numerical simulation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26091
  • Filename
    1485244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104805