DocumentCode :
1104816
Title :
High-voltage planar structure using SiO2-SIPOS-SiO2film
Author :
Mimura, A. ; Oohayashi, M. ; Murakami, S. ; Momma, N.
Author_Institution :
Hitachi Limited, Hitachi, Ibaraki, Japan
Volume :
6
Issue :
4
fYear :
1985
fDate :
4/1/1985 12:00:00 AM
Firstpage :
189
Lastpage :
191
Abstract :
The BVCB0leakage current hFEwere studied for high-voltage planar transistors which had three kinds of passivation films; SiO2-semi-insulating polycrystalline silicon (SIPOS)-SiO2; SIPOS-SiO2; and SiO2-phosphosilicate glass (PSG)-SiO2. The SiO2-SIPOS-SiO2type had a lower leakage current (surface generation current) and higher hFEthan the conventional SIPOS-SiO2type. The SiO2-SIPOS-SiO2type also had the highest BVCB0due to the field-plate effect.
Keywords :
Glass; Helium; Insulation; Leakage current; Maintenance; Passivation; Semiconductor device reliability; Semiconductor films; Silicon; Surface contamination;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26092
Filename :
1485245
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1104816
بازگشت