• DocumentCode
    1104825
  • Title

    Analysis of surface-induced degradation of GaAs power MESFET´s

  • Author

    Dumas, J.M. ; Lecrosnier, D. ; Bresse, J.F.

  • Author_Institution
    Centre National d´´Etudes des Telecommunications, Lannion, France
  • Volume
    6
  • Issue
    4
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    192
  • Lastpage
    194
  • Abstract
    Long-term degradation of GaAs power MESFET´s is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO2surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation.
  • Keywords
    Aging; Current measurement; Degradation; Gain measurement; Gallium arsenide; Life testing; MESFETs; Manufacturing; Power measurement; Radiofrequency identification;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26093
  • Filename
    1485246
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104825