• DocumentCode
    1104926
  • Title

    Direct measurement of the available voltage gain of bipolar and field-effect transistors

  • Author

    Jaeger, R.C. ; Daneshvar, K. ; Fox, R.M. ; Dillard, W.C.

  • Author_Institution
    Auburn University, Auburn, AL, USA
  • Volume
    6
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    219
  • Lastpage
    220
  • Abstract
    A new method for the direct measurement of the available voltage gain of bipolar and field-effect transistors is presented. The method is easily automated using existing semiconductor parameter analysis systems. An example of direct measurement of the mismatch in available gain is also presented.
  • Keywords
    Analog circuits; Bipolar transistors; Electrical resistance measurement; Equivalent circuits; FETs; Gain measurement; Helium; Operational amplifiers; Transconductance; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26103
  • Filename
    1485256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104926