Title :
Direct measurement of the available voltage gain of bipolar and field-effect transistors
Author :
Jaeger, R.C. ; Daneshvar, K. ; Fox, R.M. ; Dillard, W.C.
Author_Institution :
Auburn University, Auburn, AL, USA
fDate :
5/1/1985 12:00:00 AM
Abstract :
A new method for the direct measurement of the available voltage gain of bipolar and field-effect transistors is presented. The method is easily automated using existing semiconductor parameter analysis systems. An example of direct measurement of the mismatch in available gain is also presented.
Keywords :
Analog circuits; Bipolar transistors; Electrical resistance measurement; Equivalent circuits; FETs; Gain measurement; Helium; Operational amplifiers; Transconductance; Voltage measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26103
