• DocumentCode
    1105021
  • Title

    Comparison of the saturated current in normal and inverted modulation-doped In0.53Ga0.47As/InP structures

  • Author

    Chan, W.K. ; Cox, H.M. ; Hummel, S.G. ; Davisson, P.S. ; Leheny, R.F.

  • Author_Institution
    Bell Communications Research, Inc., Murray Hill, NJ
  • Volume
    6
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    247
  • Lastpage
    249
  • Abstract
    We measured the saturated current in both normal (doping layer on top) and inverted (doping layer on bottom) structures of modulation-doped In0.53Ga0.47As/InP. In the inverted structure, we find a saturated current consistent with the low-field carrier density and the bulk electron saturated velocity; but for the normal structure the saturated current is significantly lower than expected. Measurements indicate that this low saturation current is due to a loss of carriers at high fields.
  • Keywords
    Charge carrier density; Current measurement; Doping; Electron mobility; Epitaxial layers; FETs; HEMTs; Indium phosphide; Substrates; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26113
  • Filename
    1485266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105021