An Analytical Model Based on Surface Potential for a-Si:H Thin-Film Transistors

Author

Liu, Yuan ; Yao, Ruo-He ; Li, Bin ; Deng, Wan-Ling

Author_Institution

Inst. of Microelectron., South China Univ. of Technol., Guangzhou

Volume

4

Issue

2

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

180

Lastpage

187

Abstract

In this paper, an analytical a-Si:H thin-film transistor (TFT) model based on surface potential is presented. Firstly, an explicit approximation for the surface potential as a function of terminal voltages is proposed. In the new analytical solution, simultaneously, the effects of localized trapped charges and free carriers are considered. Moreover, the complex iterative computation is eliminated in the solution. Comparing with the numerical results, the proposed solution shows a high accuracy for predicting the surface potential under various biases. Secondly, a charge sheet model is then developed for the analysis of DC characteristics of a-Si:H TFT. The improved model can describes all operation regions via an unique formula and it is verified by a reasonable agreement between the simulated results and the experimental data.

Keywords

amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; semiconductor device models; silicon; surface potential; thin film transistors; DC characteristics; Si:H; a-Si:H thin-film transistors; analytical model; charge sheet model; free carriers effect; surface potential; terminal voltages; trapped charges effect; Amorphous silicon (a-Si); charge sheet; surface potential; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2007.907122

Filename

4472840