Title :
An Analytical Model Based on Surface Potential for a-Si:H Thin-Film Transistors
Author :
Liu, Yuan ; Yao, Ruo-He ; Li, Bin ; Deng, Wan-Ling
Author_Institution :
Inst. of Microelectron., South China Univ. of Technol., Guangzhou
fDate :
6/1/2008 12:00:00 AM
Abstract :
In this paper, an analytical a-Si:H thin-film transistor (TFT) model based on surface potential is presented. Firstly, an explicit approximation for the surface potential as a function of terminal voltages is proposed. In the new analytical solution, simultaneously, the effects of localized trapped charges and free carriers are considered. Moreover, the complex iterative computation is eliminated in the solution. Comparing with the numerical results, the proposed solution shows a high accuracy for predicting the surface potential under various biases. Secondly, a charge sheet model is then developed for the analysis of DC characteristics of a-Si:H TFT. The improved model can describes all operation regions via an unique formula and it is verified by a reasonable agreement between the simulated results and the experimental data.
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; semiconductor device models; silicon; surface potential; thin film transistors; DC characteristics; Si:H; a-Si:H thin-film transistors; analytical model; charge sheet model; free carriers effect; surface potential; terminal voltages; trapped charges effect; Amorphous silicon (a-Si); charge sheet; surface potential; thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2007.907122
