Title :
A new gate structure vertical-GaAs FET
Author :
Adachi, S. ; Ando, S. ; Asai, H. ; Susa, N.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
fDate :
6/1/1985 12:00:00 AM
Abstract :
A new vertical-(V-) GaAs FET exhibiting penthode-like characteristics has been developed and realized experimentally by combining reactive ion etching (RIE) and MO-CVD techniques. The unique feature of this device is the use of an insulator/metal/insulator-grating gate embedded in a GaAs single crystal. A comparison of the dc characteristics of the new device with a standard permeable base transistor (PBT) has been carried out. The improved device performance expected from this structure is discussed in detail.
Keywords :
Etching; FETs; Fabrication; Gallium arsenide; Gratings; Inductors; Insulation; Laboratories; Telegraphy; Telephony;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26120
