• DocumentCode
    1105110
  • Title

    A new method for calculating the noise parameters of MESFET´s and TEGFET´s

  • Author

    Cappy, A. ; Schortgen, M. ; Salmer, G.

  • Author_Institution
    C.N.R.S., Villeneuve D´´Ascq Cedex, France
  • Volume
    6
  • Issue
    6
  • fYear
    1985
  • fDate
    6/1/1985 12:00:00 AM
  • Firstpage
    270
  • Lastpage
    272
  • Abstract
    Analytical formulas for the intrinsic noise sources of both MESFET´s and TEGFET´s are derived from a numerical noise modeling. Using these expressions the calculated noise figure is in good agreement with experimental findings. The influence of gd and Cgd on the noise figure is then pointed out and a comparison between the kf factor of MESFET´s and TEGFET´s is presented.
  • Keywords
    Circuit noise; HEMTs; Impedance; MESFETs; MODFETs; Millimeter wave technology; Noise figure; Numerical models; Semiconductor device noise; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26122
  • Filename
    1485275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105110