DocumentCode :
1105184
Title :
Extreme Ultraviolet Plasma Source For Future Lithography
Author :
Wagenaars, Erik ; Mader, Arnaud ; Bergmann, Klaus ; Jonkers, Jeroen ; Neff, Willi
Author_Institution :
Laser Technol., Aachen Univ., Aachen
Volume :
36
Issue :
4
fYear :
2008
Firstpage :
1280
Lastpage :
1281
Abstract :
An extreme ultraviolet (EUV) plasma source intended for future lithography applications is presented. The plasma source efficiently emits EUV light around 13.5 nm with 2% bandwidth. Debris mitigation and collector systems are successfully implemented to achieve a focused beam of debris-free EUV photons that can be used in EUV lithography.
Keywords :
discharges (electric); pinch effect; plasma materials processing; plasma sources; ultraviolet lithography; EUV lithography; collector systems; debris mitigation; debris-free EUV photons; extreme ultraviolet plasma source; gas discharges; plasma pinch; wavelength 13.5 nm; Extreme ultraviolet; gas discharges; lithography; plasma pinch;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2008.917780
Filename :
4472854
Link To Document :
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