DocumentCode
1105282
Title
Low-noise operation in buried-channel MOSFET´s
Author
Watanabe, T.
Author_Institution
Sharp Corporation, Tenri, Nara, Japan
Volume
6
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
317
Lastpage
319
Abstract
Noise measurements in buried-channel MOSFET´s are presented on various operating conditions. A new noise source has been observed in the weak inversion regime of the MOSFET´s. By avoiding this noise source and other known noise sources in buried-channel devices, a good noise performance of MOS analog circuits has been obtained.
Keywords
Circuit noise; Driver circuits; Impact ionization; Inverters; Kirchhoff´s Law; MOSFET circuits; Neodymium; Noise measurement; Resistors; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26140
Filename
1485293
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