Title :
High-speed high-power 1.3-µm InGaAsP/InP surface-emitting LED´s for short-haul wide-bandwidth optical-fiber communications
Author :
King, W.C. ; Chin, B.H. ; Camlibel, I. ; Zipfel, C.L.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
7/1/1985 12:00:00 AM
Abstract :
High-speed high-power double-heterostructure 1.3-µm InGaAsP/InP LED´s have been developed for use in short-haul wide-bandwidth fiber-optics systems. At 150-mA dc, devices typically launch - 11.7 dBm into a 62-µm core graded index (GI) fiber. Optical bandwidth is typically 690 MHz with a 50-mA prebias. Modulation capability was demonstrated at 1-Gbit/s NRZ with - 15.7 dBm of peak power launched into the fiber. Rise and fall times of 340 and 780 ps, respectively, were achieved. Reliability data indicates a median life of ∼ 108h for anticipated operating conditions.
Keywords :
Bandwidth; Broadband amplifiers; High speed optical techniques; Indium phosphide; Optical amplifiers; Optical fiber devices; Optical modulation; Power amplifiers; Power generation; Radiofrequency amplifiers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26146